Key facts
- Brand
- Fairchild
- Model
- FQPF19N10L
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF19N10L Datasheet
The FQPF19N10L is a 100 V N‑Channel enhancement mode MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for low‑voltage applications such as high‑efficiency DC‑DC converters and motor control, offering low on‑state resistance and fast switching.
Key specifications include a continuous drain current of 13.6 A, typical gate charge of 14 nC, Rds(on) of 0.12 Ω at Vgs = 10 V, and a maximum junction temperature of 175 °C. The datasheet also details thermal resistance values, breakdown voltage variation with temperature, and test circuit diagrams for gate charge, resistive switching, and diode recovery.
Fairchild FQPF19N10L specifications
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 13.6 A |
| Typical Gate Charge (Qg) | 14 nC |
| On‑Resistance (Rds(on)) | 0.12 Ω @ Vgs = 10 V |
| Thermal Resistance, Junction‑to‑Case | 3.95 °C/W |
| Maximum Junction Temperature | 175 °C |
| Power Dissipation at 25 °C | 38 W |
Source: Fairchild FQPF19N10L Datasheet
All Fairchild FQPF19N10L documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current?
The device can handle a continuous drain current of 13.6 A at a 25 °C case temperature.
What is the typical gate charge of the FQPF19N10L?
The typical gate charge is 14 nC.
What is the maximum drain‑source voltage for the FQPF19N10L?
The device is rated for a maximum drain‑source voltage of 100 V.
How much continuous drain current can the FQPF19N10L handle at 25 °C?
It can handle up to 13.6 A continuous drain current at 25 °C.