This document describes FQPF20N06, a 60V N-Channel MOSFET produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. This device is suitable for low voltage applications in automotive, DC/DC converters, and portable battery-operated products.
The FQPF20N06 N‑Channel MOSFET is built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance and fast switching for low‑voltage applications such as automotive and DC‑DC converters. It is rated for 60 V drain‑source voltage and can handle high energy pulses in avalanche mode.
Key features include a continuous drain current of 15 A at 25 °C, a pulsed current rating of 60 A, low gate charge (typical 11.5 nC), low reverse transfer capacitance (typical 25 pF), and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and includes detailed electrical and thermal characteristics for design reference.
| Drain‑Source Voltage (V_DSS) | 60 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 15 A |
| Pulsed Drain Current (I_D) (Note 1) | 60 A |
| Gate‑Source Voltage (V_GS) | ±25 V |
| Power Dissipation (P_D) @ 25 °C | 30 W |
| Typical Gate Charge (Q_g) | 11.5 nC |
| Reverse Transfer Capacitance (C_rss) | 25 pF |
| On‑Resistance (R_DS(on)) Typical | 0.048 Ω |
The device is rated for a maximum drain‑source voltage of 60 V.
It can handle up to 15 A continuous drain current at 25 °C.
The typical gate charge is 11.5 nC.
It is supplied in a TO‑220F package.