FQPF20N06 is a 60V N-Channel MOSFET produced using Fairchild's DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild Semiconductor FQPF20N06, a 60V N-Channel enhancement mode power field effect transistor. The device utilizes the company's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for low voltage applications including automotive systems, DC/DC converters, and portable battery-operated products.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (25°C) | 15 A |
| On-Resistance | 0.06 Ω |
| Maximum Junction Temperature | 175 °C |
| Package Type | TO-220F |
The maximum junction temperature rating is 175 °C.
Yes, the device is 100% avalanche tested.