Key facts
- Brand
- Philips
- Model
- BLF546
- Category
- MOS transistor
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2014-03-25
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Philips BLF546 UHF Push-Pull Power MOS Transistor Datasheet
This document is a product specification datasheet for the Philips BLF546, a silicon N-channel enhancement mode vertical D-MOS transistor. It is designed for broadband operation in communications transmitter applications within the UHF frequency range. The device features high power gain, easy power control, and good thermal stability, encapsulated in a 4-lead SOT268A balanced flange package with two ceramic caps.
The datasheet provides comprehensive technical data including quick reference performance metrics for Class-B operation, limiting values such as maximum drain-source voltage and power dissipation, and detailed electrical characteristics like threshold voltage and capacitance. It also includes application information for Class-B operation, typical performance curves, and important safety warnings regarding the use of beryllium oxide in the product.
All Philips BLF546 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application of the BLF546?
It is designed for communications transmitter applications in the UHF frequency range.
From: Philips BLF546 UHF Push-Pull Power MOS Transistor Datasheet
What is the maximum junction temperature?
The maximum junction temperature is 200 °C.
From: Philips BLF546 UHF Push-Pull Power MOS Transistor Datasheet
What is the package type for the BLF546?
The device is encapsulated in a 4-lead, SOT268 balanced flange envelope with two ceramic caps.
From: Philips BLF546 UHF Push-Pull Power MOS Transistor Datasheet
What is the maximum drain-source voltage rating?
The maximum drain-source voltage rating is 65 V.
From: Philips BLF546 UHF Push-Pull Power MOS Transistor Datasheet