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- Last added
- 2014-03-25
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Featured MOS transistor manuals
MITSUBISHI ELECTRIC AN-UHF-083-D Manual
The document provides an overview of electro‑static sensitivity for the RA30H4552M1 and RA30H4047M1 MOS FET RF power devices. It explains that MOS FETs have lower surge endurance than silicon bipolar devices and can be damaged by static discharge.
Test procedures include a block diagram, pin assignments, and human model test results. Test conditions were C=100 pF, R=1.5 kΩ, three discharges per voltage step, with voltage increased up to 6000 V. The results show the voltage levels at which the devices were destroyed for various pin‑to‑ground polarities.
Covers: Subject · General · Electro Static Discharge Test Results · Test Block Diagram · Pinning · Human Model Test Results
Toshiba SSM3K36TU Silicon N-Channel MOSFET Datasheet
This datasheet provides the electrical specifications of the Toshiba SSM3K36TU silicon N‑channel MOSFET, such as drain‑source voltage, gate‑source voltage, on‑resistance, and capacitances. It also includes dynamic input characteristics and typical switching waveforms.
The document contains usage and handling precautions, package dimensions, and a disclaimer about the intended applications and reliability considerations for the device. This manual is written in Japanese.
Covers: Electrical Characteristics · Dynamic Input Characteristics · Package Outline · Usage Precautions · Product Handling Request
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MITSUBISHI ELECTRIC AN-UHF-083-D Manual
Application Note 2 pages · 28 KB · ENThis application note from Mitsubishi Electric details electro‑static discharge sensitivity test results for the RA30H4552M1 and RA30H4047M1 silicon RF…
Toshiba SSM3K36TU Silicon N-Channel MOSFET Datasheet
Datasheet 5 pages · 257 KB · JATechnical data sheet for the Toshiba SSM3K36TU silicon N‑channel MOSFET, including electrical characteristics and handling notes.
Which document do I need?
Application Note
How to use the product for one specific task, with worked examples.
Datasheet
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in MOS transistor manuals
What type of semiconductor devices are RA30H4552M1 and RA30H4047M1?
Both devices are MOS FET silicon RF power semiconductors.
What are the electro‑static discharge test conditions used in the note?
The test used a 100 pF capacitor, 1.5 kΩ resistor, three discharges per voltage step, and increased the voltage up to 6000 V.
What is the maximum drain‑source voltage for the SSM3K36TU?
The device is rated for a maximum drain‑source voltage of 20 V.
What gate‑source voltage should be applied for normal operation?
A gate‑source voltage of up to 10 V is specified for the MOSFET.