Philips BLF546 UHF Push-Pull Power MOS Transistor Datasheet

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Philips BLF546 UHF Push-Pull Power MOS Transistor Datasheet - cover page
Brand
Philips
Category
MOS transistor
Document type
Datasheet
Language
English
Pages
15
File format
PDF
File size
127 KB
Published
25 March, 2014
Updated
25 September, 2023
Model
BLF546
MD5 checksum
E21C5F568B072409F89707662AFDCA1E

About this manual

This document is a product specification datasheet for the Philips BLF546, a silicon N-channel enhancement mode vertical D-MOS transistor. It is designed for broadband operation in communications transmitter applications within the UHF frequency range. The device features high power gain, easy power control, and good thermal stability, encapsulated in a 4-lead SOT268A balanced flange package with two ceramic caps.

The datasheet provides comprehensive technical data including quick reference performance metrics for Class-B operation, limiting values such as maximum drain-source voltage and power dissipation, and detailed electrical characteristics like threshold voltage and capacitance. It also includes application information for Class-B operation, typical performance curves, and important safety warnings regarding the use of beryllium oxide in the product.

What's inside

  • Features
  • Description
  • Pin Configuration
  • Quick Reference Data
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Application Information
  • Data Sheet Status
  • Disclaimers

Specifications

Package Type4-lead, SOT268A balanced flange

Frequently asked questions

What is the primary application of the BLF546?

It is designed for communications transmitter applications in the UHF frequency range.

What is the maximum junction temperature?

The maximum junction temperature is 200 °C.

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