Key facts
- Brand
- Philips
- Model
- BFG198
- Category
- Other Electronics
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2026-10-17
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Philips BFG198 NPN 8 GHz Wideband Transistor Datasheet
The document describes the Philips BFG198, an NPN planar epitaxial transistor housed in a plastic SOT223 envelope. It is designed specifically for wideband amplifier applications, featuring high gain and excellent output voltage capabilities. Key performance metrics include a transition frequency (fT) of 8 GHz and maximum unilateral power gain (GUM) up to 18 dB at 500 MHz.
The datasheet details limiting values such as a maximum collector-base voltage of 20 V and a total power dissipation of 1 W. It also includes thermal characteristics, electrical parameters like collector capacitance and feedback capacitance, and graphical data showing performance curves for gain, intermodulation distortion, and S-parameters across the frequency range.
Philips BFG198 specifications
| Package type | SOT223 |
|---|---|
| Collector-base voltage (VCBO) | 20 V |
| Collector-emitter voltage (VCEO) | 10 V |
| DC collector current (IC) | 100 mA |
| Total power dissipation (Ptot) | 1 W |
| Transition frequency (fT) | 8 GHz |
| Maximum unilateral power gain (GUM) @ 500 MHz | 18 dB |
| Storage temperature (Tstg) | -65 to +150 °C |
Source: Philips BFG198 NPN 8 GHz Wideband Transistor Datasheet
All Philips BFG198 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the intended application for the BFG198 transistor?
It is intended for wideband amplifier applications.
From: Philips BFG198 NPN 8 GHz Wideband Transistor Datasheet
What is the maximum collector-base voltage rating?
The maximum collector-base voltage (VCBO) is 20 V.
From: Philips BFG198 NPN 8 GHz Wideband Transistor Datasheet
What is the maximum DC collector current rating for this device?
The maximum DC collector current is 100 mA.