The BLF546 is a UHF push-pull power MOS transistor with high power gain, easy power control, good thermal stability, and designed for broadband operation.
The Philips BLF546 is a silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. It features high power gain, easy power control, and good thermal stability, with gold metallization ensuring excellent reliability. The device is encapsulated in a 4-lead, SOT268 balanced flange envelope with two ceramic caps.
| Storage temperature | -65 to 150 °C |
|---|---|
| Junction temperature | 200 °C |
The device is encapsulated in a 4-lead, SOT268 balanced flange envelope with two ceramic caps.
The maximum drain-source voltage rating is 65 V.
The maximum junction temperature is 200 °C.