FQT7N10L is a 100V logic N-Channel MOSFET produced by Fairchild. Its features are RDS(on) = 0.35Ω @VGS = 10 V, low gate charge (typical 4.6 nC), low Crss (typical 12 pF), fast switching, improved dv/dt capability, low level gate drive requirements allowing direct operation from logic drives.
The FQT7N10L is a 100 V logic‑level N‑channel MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance and fast switching, making it suitable for low‑voltage DC‑DC converters and motor‑control applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit diagrams, and package dimensions for the SOT‑223 case. It also includes trademark information and product status definitions.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 17 A |
| Gate‑Source Voltage (V_GS) | +20 V |
| Power Dissipation (P_D) @ 25 °C | 2.0 W |
| Thermal Resistance, Junction‑to‑Ambient | 62.5 °C/W |
| Reverse Transfer Capacitance (C_rss) | 12‑15 pF |
The device is rated for a maximum drain‑source voltage of 100 V.
It is supplied in an SOT‑223 surface‑mount package.
No, Fairchild states its products are not authorized for use as critical components in life‑support devices.