FQT7N10L is a 100V LOGIC N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has features such as 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V, low gate charge (typical 4.6 nC), low Crss (typical 12 pF).
The document describes the Fairchild FQT7N10L, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. This device is optimized to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.
| Drain-Source Voltage (VDSS) | 100 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 1.7 A |
| On-Resistance (RDS(on)) @ VGS = 10V | 0.35 Ω |
| Total Gate Charge (Typical) | 4.6 nC |
| Reverse Transfer Capacitance (Crss) Typ | 12 pF |
The device supports a continuous drain current of 1.7 A when the case temperature is 25°C.
The device operates and can be stored within a temperature range of -55 to +150 °C.
The component can withstand a single pulsed avalanche energy of 50 mJ.