This document is a technical datasheet for the Fairchild Semiconductor FQT4N25, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance while providing superior switching performance and high energy pulse tolerance in avalanche and commutation modes.
| Drain-Source Voltage (VDSS) | 250 V |
|---|---|
| Continuous Drain Current (ID) @ TC = 25°C | 0.83 A |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.75 Ω |
| Total Gate Charge (Qg) | 4.3 nC |
| Reverse Transfer Capacitance (Crss) | 4.8 pF |
| Operating Temperature Range | -55 to +150 °C |
The maximum drain-source voltage (VDSS) for the FQT4N25 is 250 V.
The device uses a SOT-223 package.