FQT4N25 is an N-channel enhancement mode power field effect transistor manufactured by Philips using Philips' proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse, and is suitable for high efficiency switching DC/DC converters and switch mode power supplies.
The FQT4N25 is an N‑Channel enhancement mode power MOSFET designed with Fairchild’s planar stripe DMOS technology. It offers low gate charge (typical 4.3 nC), low output capacitance (typical 4.8 pF), fast switching, and improved dv/dt capability, making it suitable for high‑efficiency DC‑DC converters and switch‑mode power supplies.
Key specifications include a 250 V drain‑source rating, 0.83 A continuous drain current at 25 °C, 3.3 A pulsed current, and a thermal resistance of 50 °C/W. The datasheet also provides typical characteristic curves, test circuit diagrams, and package dimensions for the SOT‑223 package.
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25°C | 0.83 A |
| Pulsed Drain Current | 3.3 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25°C | 25 W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 50 °C/W |
| Typical Gate Charge (Q_g) | 4.3 nC |
The maximum drain‑source voltage is 250 V.
The typical gate charge is 4.3 nC.
It can handle up to 0.83 A continuous drain current at 25 °C.