FQT13N06 60V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance and high energy pulse endurance, making it ideal for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.
This document is a technical datasheet for the Fairchild Semiconductor FQT13N06, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-source voltage rating of 60V, a continuous drain current of 2.8A at 25°C, and an on-resistance (RDS(on)) of 0.14Ω. The datasheet provides detailed electrical characteristics, typical characteristic curves, test circuit diagrams for switching parameters, and package dimensions for the SOT-223 form factor.
| Continuous Drain Current (ID) @ TC=25°C | 2.8 A |
|---|---|
| On-Resistance (RDS(on)) @ VGS=10V, ID=1.4A | 0.14 Ω |
| Gate-Source Voltage (VGSS) | ± 25 V |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
Yes, the document states these devices are well suited for low voltage applications such as DC/DC converters.
The typical total gate charge (Qg) is 5.8 nC.