This is a document about FQT13N06 60V N-Channel MOSFET, which describes the features and characteristics of the product, including low voltage applications, low on-state resistance, and high efficiency.
The FQT13N06 is a 60 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge (typical 5.8 nC), low output capacitance (typical 15 pF), and fast switching suitable for low‑voltage DC‑DC converters and battery‑powered products.
Key electrical specifications include a maximum drain‑source voltage of 60 V, continuous drain current of 28 A at 25 °C, typical on‑resistance of 0.11 Ω, and a total gate charge of about 5.8 nC. The device is supplied in an SOT‑223 surface‑mount package.
| Drain‑Source Voltage (V_DSS) | 60 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 28 A |
| Gate‑Source Voltage (V_GS) | ±25 V |
The maximum drain‑source voltage is 60 V.
It is supplied in an SOT‑223 surface‑mount package.