FQP2N60C/FQPF2N60C is a 600V N-Channel MOSFET produced by Fairchild. Its features are: 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V, low gate charge (typical 8.5 nC), low Crss (typical 4.3 pF), fast switching, 100% avalanche tested, improved dv/dt capability.
The document describes the Fairchild 600 V N‑Channel MOSFETs (FQP2N60C and FQPF2N60C) built with planar stripe DMOS technology. It highlights features such as low on‑state resistance, low gate charge, fast switching, and 100 % avalanche testing, making the devices suitable for high‑efficiency switched‑mode power supplies and related applications.
Detailed electrical and thermal specifications are presented, along with typical characteristic curves, test circuit diagrams for gate charge, resistive and inductive switching, and package dimensions for the TO‑220 and TO‑220F variants. The note also includes trademark information, disclaimer, and product status definitions.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 2.0 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 4.72 mΩ @VAG=10 V |
| Typical Gate Charge (Qg) | 8.5 nC |
| Thermal Resistance, Junction‑to‑Case | 2.32 °C/W |
The MOSFET is rated for a maximum drain‑source voltage of 600 V.
The typical gate charge is 8.5 nC.
The device is offered in TO‑220 and TO‑220F packages.
Yes, it is 100 % avalanche tested.