Key facts
- Brand
- Fairchild
- Model
- FQA9N90C
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
This document provides design specifications for the Fairchild FQA9N90C_F109, an N-channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
Read onlineFairchild FQA9N90C specifications
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 9.0 A |
| Pulsed Drain Current | 36 A |
| Total Gate Charge | 45 nC typical |
| Gate-Source Voltage Max | +30 V |
| Operating Temperature Range | -55 to +150 °C |
Source: Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum single pulsed avalanche energy?
The device can withstand a single pulsed avalanche energy of up to 900 mJ.
From: Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The MOSFET can withstand up to 900 V between drain and source.
From: Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
What continuous drain current can it handle at 25 °C?
It is rated for a continuous drain current of 9.0 A at 25 °C.
From: Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The MOSFET is rated for a maximum drain‑source voltage of 900 V.
What continuous drain current can it handle at 25 °C?
It can conduct up to 9.0 A continuously at 25 °C.