Key facts
- Brand
- Fairchild
- Model
- FQAF13N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF13N50 500V N-Channel MOSFET Datasheet
The FQAF13N50 is a 500 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge (typical 45 nC), low output capacitance (typical 25 pF), fast switching, and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies and power‑factor‑correction circuits.
Key specifications include a continuous drain current of 9.6 A at 25 °C, pulsed drain current of 38.4 A, a drain‑source voltage rating of 500 V, and a power dissipation capability of 100 W. Thermal resistance values are 1.25 °C·W (junction‑to‑case) and 40 °C·W (junction‑to‑ambient). The device is supplied in a TO‑3PF package.
Fairchild FQAF13N50 specifications
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 9.6 A |
| Pulsed Drain Current (I_D) (Note 1) | 38.4 A |
| Gate‑Source Voltage (V_GS) | 30 V |
| Power Dissipation (P_D) @ 25 °C | 100 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.25 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C·W |
| Output Capacitance (Coss) | 245 pF (typical) |
All Fairchild FQAF13N50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQAF13N50?
The device is rated for a maximum drain‑source voltage of 500 V.
What is the continuous drain current rating at 25 °C?
The continuous drain current is 9.6 A at 25 °C.
What is the maximum drain‑source voltage of the FQAF13N50?
The device is rated for a maximum drain‑source voltage of 500 V.
What continuous drain current can the FQAF13N50 handle at 25 °C?
It can conduct up to 9.6 A continuously at a case temperature of 25 °C.