Key facts
- Brand
- Fairchild
- Model
- FQAF11N90C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQAF11N90C 900V N-Channel MOSFET Datasheet
This document provides the design specifications for the FQAF11N90C, a 900V N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies.
Read onlineFairchild FQAF11N90C specifications
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 7.0 A |
| Continuous Drain Current (Tj = 100°C) | 4.4 A |
| Power Dissipation (Tg = 25°C) | 120 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
Source: Fairchild Semiconductor FQAF11N90C 900V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the continuous drain current ratings at different temperatures?
The device supports a continuous drain current of 7.0 A at 25°C and 4.4 A at 100°C.
From: Fairchild Semiconductor FQAF11N90C 900V N-Channel MOSFET Datasheet
What is the maximum single pulsed avalanche energy?
The device can withstand a single pulsed avalanche energy of 960 mJ.
From: Fairchild Semiconductor FQAF11N90C 900V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The FQAF11N90C is rated for a maximum drain‑source voltage of 900 V.
How much continuous drain current can the device handle at 25 °C?
It can conduct up to 7.0 A continuously at a case temperature of 25 °C.