Key facts
- Brand
- Fairchild
- Model
- FQAF11N90
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF11N90 Datasheet
The FQAF11N90 is a 900 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key specifications include a continuous drain current of 7.2 A at 25 °C, a pulsed drain current of 28.8 A, a typical gate charge of 72 nC, and a maximum power dissipation of 120 W. The datasheet also details thermal resistance values, switching characteristics, and test circuit diagrams for gate charge and diode recovery.
Fairchild FQAF11N90 specifications
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 7.2 A |
| Pulsed Drain Current (ID) (Note 1) | 28.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Single Pulsed Avalanche Energy | 1000 mJ |
| Power Dissipation (PD) @ 25 °C | 120 W |
| Thermal Resistance, Junction‑to‑Case (RJC) | 1.04 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RJA) | 40 °C·W |
| Typical Gate Charge (Qg) | 72 nC |
Source: Fairchild FQAF11N90 Datasheet
All Fairchild FQAF11N90 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQAF11N90?
The device is rated for a maximum drain‑source voltage of 900 V.
What continuous drain current can the FQAF11N90 handle at 25 °C?
It can conduct up to 7.2 A continuously at a case temperature of 25 °C.
What is the maximum drain‑source voltage of the FQAF11N90?
The maximum drain‑source voltage is 900 V.
What is the typical gate charge for this MOSFET?
The typical gate charge is 72 nC.