Key facts
- Brand
- Fairchild
- Model
- FQAF13N80
- Industry
- Industrial
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-07-12
Start here
Fairchild FQAF13N80 800V N-Channel MOSFET Datasheet
The Fairchild FQAF13N80 is an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes, making it well-suited for high efficiency switch mode power supplies.
The document provides absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic characteristics, and switching parameters. It also includes typical characteristics graphs, test circuit diagrams, and package dimensions for the TO-3PF package. This manual is written in Chinese.
Fairchild FQAF13N80 specifications
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 8.0 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-3PF |
All Fairchild FQAF13N80 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage of the FQAF13N80?
The maximum drain-source voltage is 800 V.
Is the FQAF13N80 avalanche tested?
Yes, the device is 100% avalanche tested.
What is the maximum continuous drain current at 25 °C?
The device can handle a continuous drain current of 8.0 A at a case temperature of 25 °C.
What is the rated drain‑source voltage?
The MOSFET is rated for a maximum drain‑source voltage of 800 V.