Key facts
- Brand
- Fairchild
- Model
- FQAF16N25
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF16N25 MOSFET Datasheet
The FQAF16N25 is an N‑Channel enhancement mode power MOSFET designed for high‑efficiency switching applications such as DC‑DC converters and switch‑mode power supplies. It features low gate charge, low output capacitance, fast switching and 100 % avalanche testing, making it suitable for high‑energy pulse environments.
Key specifications include a 250 V drain‑source rating, 12.4 A continuous drain current at 25 °C, 0.23 Ω typical on‑resistance, and a total gate charge of about 27 nC. The device is supplied in a TO‑3PF package with thermal resistance of 1.47 °C·W (junction‑to‑case) and 40 °C·W (junction‑to‑ambient).
Fairchild FQAF16N25 specifications
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 12.4 A |
| Pulsed Drain Current (I_Dp) | 50 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.47 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C·W |
All Fairchild FQAF16N25 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQAF16N25?
The device is rated for a maximum drain‑source voltage of 250 V.
What continuous drain current can the FQAF16N25 handle at 25 °C?
It can conduct up to 12.4 A continuously at a case temperature of 25 °C.
What is the maximum drain‑source voltage for the FQAF16N25?
The FQAF16N25 can withstand up to 250 V drain‑source voltage.
What continuous drain current can the FQAF16N25 handle at 25 °C?
It is rated for a continuous drain current of 12.4 A at 25 °C.