Key facts
- Brand
- Fairchild
- Model
- FQAF16N25C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQAF16N25C 250V N-Channel MOSFET Datasheet
The FQAF16N25C is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency DC/DC converters, switch‑mode power supplies, UPS DC‑AC converters, and motor‑control applications.
Key specifications include a 250 V drain‑source rating, 11.4 A continuous drain current, 0.27 Ω typical on‑resistance at VGS = 10 V, and a low typical gate charge of 41 nC. The device features a thermal resistance of 1.7 °C/W (junction‑to‑case) and is rated for fast switching and high avalanche energy.
Fairchild FQAF16N25C specifications
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) | 11.4 A |
| On‑Resistance (RDS(on)) | 0.27 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 41 nC |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.7 °C/W |
Source: Fairchild FQAF16N25C 250V N-Channel MOSFET Datasheet
All Fairchild FQAF16N25C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQAF16N25C?
The device is rated for a maximum drain‑source voltage of 250 V.
What is the typical on‑resistance of this MOSFET?
Its typical on‑resistance is 0.27 Ω when VGS is 10 V.
What is the maximum drain‑source voltage for the FQAF16N25C?
The device is rated for a maximum drain‑source voltage of 250 V.
What is the typical gate charge of this MOSFET?
The typical gate charge is 41 nC.