Datasheet
FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ is a low-power power transistor with 3.5mΩ (typical) on-resistance, 95nC (typical) gate charge, low Miller charge and low QRR body diode. The device meets AEC Q101 standard and is suitable for automotive, industrial, and consumer electronics applications.
User Manual
FDP038AN06A0 / FDI038AN06A0 is a 60V, 80A, 3.8mΩ N-Channel PowerTrench® MOSFET. Its features include: rDS(ON) = 3.5mΩ (typical), VGS = 10V, ID = 80A; Qg(tot) = 95nC (typical), VGS = 10V; low Miller charge; low QRR body diode; UIS capability (single pulse and repetitive pulse).
Datasheet
This product is a N-Channel PowerTrench® MOSFET, with a rated voltage of 60V and a rated current of 80A. The on-resistance is 3.8mΩ.
User Manual
FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ, Features low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse), qualified to AEC Q101, formerly developmental type 82584. It is suitable for automotive powertrain management, DC-DC converters and Off-line UPS, distributed power architectures and VRMs, primary switch for 12V and 24V systems.
User Manual
FDP038AN06A0 / FDI038AN06A0 is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. Its features are rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A, Qg(tot) = 95nC (Typ.), VGS = 10V, Low Miller Charge, Low QRR Body Diode, UIS Capability (Single Pulse and Repetitive Pulse), Qualified to AEC Q101. This product is suitable for Motor / Body Load Control, ABS Systems, Powertrain Management, Injection Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 12V and 24V systems.
