Key facts
- Brand
- Fairchild
- Model
- MMBF4416
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor MMBF4416 N-Channel RF Amplifier Datasheet
This document is a datasheet for the MMBF4416, an N-Channel RF Amplifier designed for RF applications. It is manufactured using a 50 process and is available in the SOT-23D package. The device features a gate-source breakdown voltage of 30V and a maximum junction temperature of 150°C.
Read onlineFairchild MMBF4416 specifications
| Drain-Gate Voltage | 30 V |
|---|---|
| Gate-Source Voltage | -30 V |
| Forward Gate Current | 10 mA |
| Junction Temperature Range | -55 to +150 °C |
| Package Type | SOT-23D |
| Thermal Resistance Junction to Ambient | 556 °C/W |
Source: Fairchild Semiconductor MMBF4416 N-Channel RF Amplifier Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the process technology used for this device?
The device is sourced from process 50.
From: Fairchild Semiconductor MMBF4416 N-Channel RF Amplifier Datasheet
What is the maximum junction temperature?
The maximum junction and storage temperature range is -55 to +150 °C.
From: Fairchild Semiconductor MMBF4416 N-Channel RF Amplifier Datasheet
What is the operating and storage junction temperature range?
The operating and storage junction temperature range is -55 to 150 °C.
From: Fairchild Semiconductor MMBF4416A N-Channel RF Amplifier Datasheet
What is the maximum forward gate current?
The maximum forward gate current is 10 mA.
From: Fairchild Semiconductor MMBF4416A N-Channel RF Amplifier Datasheet