Key facts
- Brand
- Fairchild
- Model
- QSB363
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-01
Start here
Fairchild Semiconductor QSB363C Subminiature Plastic Silicon Infrared Phototransistor Datasheet
The QSB363C is an NPN silicon phototransistor encapsulated in a clear plastic T-3/4 (2mm) surface mount package. It features a medium wide beam angle of 24° and is designed to match with QEB363 or QEB373 emitters. The device is available with various lead form options, including Gullwing, Yoke, and Z-Bend, and can be supplied in tape and reel or bulk packaging.
Read onlineFairchild QSB363 specifications
| Peak Sensitivity Wavelength | 940 nm |
|---|---|
| Reception Angle | ±12° |
| Operating Temperature | -25 to +85 °C |
| Collector Emitter Voltage | 30 V |
Source: Fairchild Semiconductor QSB363C Subminiature Plastic Silicon Infrared Phototransistor Datasheet
All Fairchild QSB363 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What emitters is the QSB363C compatible with?
It is matched with QEB363 or QEB373 emitters.
From: Fairchild Semiconductor QSB363C Subminiature Plastic Silicon Infrared Phototransistor Datasheet
What are the available lead form options?
The device offers Gullwing, Yoke, and Z-Bend lead options.
From: Fairchild Semiconductor QSB363C Subminiature Plastic Silicon Infrared Phototransistor Datasheet
What is the peak sensitivity wavelength of the QSB363?
The peak sensitivity wavelength is 940 nm.
From: Fairchild Semiconductor QSB363 Subminiature Plastic Silicon Infrared Phototransistor Datasheet
What are the available lead form options for the QSB363?
The device supports Gullwing, Y-oke, and Z-Bend lead configurations.
From: Fairchild Semiconductor QSB363 Subminiature Plastic Silicon Infrared Phototransistor Datasheet