FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ is a low-power power transistor with 3.5mΩ (typical) on-resistance, 95nC (typical) gate charge, low Miller charge and low QRR body diode. The device meets AEC Q101 standard and is suitable for automotive, industrial, and consumer electronics applications.
This document is a datasheet for the Fairchild FDP038AN06A0 and FDI038AN06A0 N-Channel PowerTrench MOSFETs. The device is rated for 60V drain-to-source voltage, 80A continuous drain current, and a typical on-resistance of 3.8mΩ. It is qualified to AEC Q101 standards for automotive use and features low Miller charge and UIS capability.
| Drain to Source Voltage | 60 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (Tc < 151°C) | 80 A |
| Continuous Drain Current (Tc = 25°C) | 17 A |
| On Resistance (Typical) | 3.8 mΩ |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.48 °C/W |
| Total Gate Charge | 95 nC |
Yes, the product is qualified to AEC Q101 standards for automotive industry requirements.
The single pulse avalanche energy is 625 mJ.