FDP038AN06A0 / FDI038AN06A0 is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. Its features are rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A, Qg(tot) = 95nC (Typ.), VGS = 10V, Low Miller Charge, Low QRR Body Diode, UIS Capability (Single Pulse and Repetitive Pulse), Qualified to AEC Q101. This product is suitable for Motor / Body Load Control, ABS Systems, Powertrain Management, Injection Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 12V and 24V systems.
The FDP038AN06A0 is a N‑Channel PowerTrench MOSFET designed for automotive power‑train and DC‑DC converter applications. It offers a 60 V drain‑to‑source rating, 80 A continuous drain current, and low on‑resistance for efficient switching.
The datasheet provides detailed electrical characteristics, thermal parameters, recommended test circuits, and PSPICE/SABER models to aid designers in simulation and layout. It also includes ordering information, package markings, and compliance notes for automotive standards such as AEC‑Q101.
| Drain‑to‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | 42 V |
| Continuous Drain Current (ID) | 80 A |
| Power Dissipation (PD) | 310 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.48 °C/W |
| Input Capacitance (Ciss) | 6400 pF |
| Total Gate Charge (Qg) | 95 nC |
| On‑Resistance (RDS(on)) typical | 0.0049 Ω |
The device is rated for a maximum drain‑to‑source voltage of 60 V.
It can conduct up to 80 A continuously under the specified temperature conditions.
Typical on‑resistance is about 0.0049 Ω at a gate voltage of 10 V.
Yes, the datasheet states the device is designed to meet automotive test conditions and is qualified to AEC‑Q101.