Key facts
- Brand
- Fairchild
- Model
- FDP025N06
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
Start here
Fairchild FDP025N06 N-Channel PowerTrench MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor FDP025N06, an N-Channel PowerTrench MOSFET. The device utilizes advanced trench technology to achieve extremely low on-state resistance while maintaining superior switching performance. It is designed for high-power applications such as DC-to-DC converters and synchronous rectification.
Read onlineFairchild FDP025N06 specifications
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 265 A |
| Continuous Drain Current (Package Limited) | 4120 A |
| Static Drain to Source On Resistance | Typ. 2.5 mΩ |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | TO-220 |
Source: Fairchild FDP025N06 N-Channel PowerTrench MOSFET Datasheet
All Fairchild FDP025N06 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical on-state resistance of the FDP025N06?
The typical static drain to source on-resistance is 2.5 mΩ when Vgs = 10V and Id = 75A.
From: Fairchild FDP025N06 N-Channel PowerTrench MOSFET Datasheet
Is the FDP025N06 RoHS compliant?
Yes, the device is listed as RoHS compliant in the features section.
From: Fairchild FDP025N06 N-Channel PowerTrench MOSFET Datasheet
What is the maximum continuous drain current for the FDP025N06?
The datasheet specifies a continuous drain current of 265 A at 25 °C (silicon limited).
From: Fairchild FDP025N06 N-Channel PowerTrench MOSFET Datasheet
What is the typical on‑resistance of the device?
Typical RDS(on) is 1.9 mΩ when VGS = 10 V and ID = 75 A.
From: Fairchild FDP025N06 N-Channel PowerTrench MOSFET Datasheet