Key facts
- Brand
- Fairchild
- Model
- AN-9068
- Category
- Other Electronics
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-07-12
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Fairchild Semiconductor AN-9068 SupreMOS Gate Resistor Design Guidelines
This document outlines the minimum and maximum recommended values for external series gate resistors (Rg) in hard-switching applications for SupreMOS products. The goal is to balance switching speed against switching losses and mitigate parasitic effects like voltage spikes and EMI. The text explains that Rg values must be selected based on the specific diode type used (SiC, Deuxpeed, or STEALTH2) to control dv/dt during turn-off and to match the switching losses of earlier SuperFET products. This manual is written in Chinese.
Read onlineFairchild AN-9068 specifications
| Product Family | SupreMOS |
|---|---|
| Document Revision | REV. 1.0.2 |
| Target Application | Hard switching applications |
Source: Fairchild Semiconductor AN-9068 SupreMOS Gate Resistor Design Guidelines
All Fairchild AN-9068 documents by type
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What is the purpose of the gate resistor Rg in SupreMOS design?
The gate resistor Rg is a key control parameter to optimize gate drive design, balancing switching speed and switching losses while managing parasitic effects.
From: Fairchild Semiconductor AN-9068 SupreMOS Gate Resistor Design Guidelines
Which diode types are recommended for clamping to ensure low dv/dt?
The document recommends using SiC, Deuxpeed, or STEALTH2 diodes as clamp diodes because their characteristics directly affect dv/dt.
From: Fairchild Semiconductor AN-9068 SupreMOS Gate Resistor Design Guidelines
What is the minimum gate resistor value required for an FCP76N60N MOSFET to keep switching dv/dt under 50V/ns at half rated current?
At least 13 Ohms or larger Rg is required.
From: Fairchild Semiconductor AN-9068 Gate Resistor Design Guidelines for SupreMOS MOSFETs
What gate resistor value achieves similar switching losses for an FCA35N60 SuperFET MOSFET when using a STEALTH™2 diode?
A 33 Ohm gate resistor achieves similar Eon and Eoff.
From: Fairchild Semiconductor AN-9068 Gate Resistor Design Guidelines for SupreMOS MOSFETs