Key facts
- Brand
- Fairchild
- Model
- FDP032N08
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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DatasheetFAIRCHILD FDP032N08 handbook
FAIRCHILD FDP032N08 handbook
Datasheet
This document describes the features and characteristics of FDP032N08 N-Channel PowerTrench® MOSFET, including 75V drain-to-source voltage, 235A drain current, and 3.2mΩ on-state resistance.
Read onlineFairchild FDP032N08 specifications
| Drain‑Source Voltage (VDS) | 75 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (Id) – Silicon Limited | 235 A |
| Pulsed Drain Current (Id,pulse) | 940 A |
| Typical On‑Resistance (RDS(on)) | 2.5 mΩ |
| Total Gate Charge (Qg) | 169 nC |
| Input Capacitance (Ciss) | 11.4 nF |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.4 °C/W |
| Maximum Power Dissipation (PD) | 375 W |
Source: Fairchild FDP032N08 N-Channel PowerTrench MOSFET Datasheet
All Fairchild FDP032N08 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for the FDP032N08?
The datasheet lists a continuous drain current of 235 A (silicon limited) at 25 °C.
From: Fairchild FDP032N08 N-Channel PowerTrench MOSFET Datasheet
What is the typical on‑resistance of the FDP032N08 MOSFET?
The typical on‑resistance is 2.5 mΩ at VGS = 10 V and ID = 75 A.
From: Fairchild FDP032N08 N-Channel PowerTrench MOSFET Datasheet