Key facts
- Brand
- STMicroelectronics
- Model
- STTH102
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-09
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STMicroelectronics STTH102 Ultrafast Diode Datasheet
This document provides technical specifications for the STTH102 ultrafast diode, which utilizes ST's new 200 V planar technology. The device is designed for switching mode base drive, transistor circuits, and free-wheeling diode applications in power supplies. Key features include very low conduction losses, negligible switching losses, and a high maximum junction temperature of 175°C.
Read onlineSTMicroelectronics STTH102 specifications
| Repetitive peak reverse voltage | 200 V |
|---|---|
| Average forward current | 1 A |
| Maximum operating junction temperature | 175 °C |
Source: STMicroelectronics STTH102 Ultrafast Diode Datasheet
All STMicroelectronics STTH102 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
What are the available packages for the STTH102?
The device is available in SMA and DO-41 packages.
What is the maximum reverse voltage rating of the STTH102 diode?
The STTH102 is rated for a repetitive peak reverse voltage of 200 V.
What is the typical forward voltage drop at 1 A for the STTH102?
At a forward current of 1 A, the typical forward voltage drop is 0.78 V.