Key facts
- Brand
- STMicroelectronics
- Model
- STTH302S
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-09
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DatasheetST STTH302S handbook
ST STTH302S handbook
Datasheet
The STTH302S is a high-efficiency ultrafast diode using ST's new 200V planar technology. It is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
Read onlineSTMicroelectronics STTH302S specifications
| Average forward current (IF(av)) | 3 A |
|---|---|
| Repetitive peak reverse voltage (VRRM) | 200 V |
| Maximum junction temperature (Tj max) | 175 °C |
| Maximum forward voltage (Vr max) | 0.75 V |
| Maximum reverse recovery time (trr max) | 35 ns |
| Junction‑to‑lead thermal resistance (RθJC) | 20 °C/W |
| Package thickness (Ti) | 1.90 – 2.45 mm |
All STMicroelectronics STTH302S documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum repetitive peak reverse voltage of the STTH302S?
The maximum repetitive peak reverse voltage is 200 V.
What is the average forward current rating?
The average forward current (IF(av)) is rated at 3 A.