Key facts
- Brand
- Philips
- Model
- BUK456-100B
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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PHILIPS PowerMOS transistor BUK456-100B handbook(1)
This document is a product specification for the Philips BUK456-1000B, an N-channel enhancement mode field-effect power transistor housed in a plastic TO220AB envelope. The device is designed for use in switched mode power supplies, motor control, welding, and general purpose switching applications.
The datasheet provides comprehensive electrical characteristics, including static parameters such as drain-source breakdown voltage and gate threshold voltage, as well as dynamic characteristics like turn-on delay time and reverse recovery time. It also includes limiting values, thermal resistances, and mechanical dimensions for the TO220AB package.
Philips BUK456-100B specifications
| Drain-source voltage (Vos) | 1000 V |
|---|---|
| Drain current (DC) (Ip) | 3.1 A |
| Total power dissipation (Prot) | 125 W |
| Junction Temperature (Tj) | 150 °C |
| Package type | TO220AB |
All Philips BUK456-100B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage?
The maximum drain-source voltage is 1000 V.
What is the maximum total power dissipation?
The maximum total power dissipation is 125 W.
What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150 °C.
What is the maximum total power dissipation for this transistor?
The maximum total power dissipation is 125 W when the junction temperature is 25°C.