BUK456-1000B is a N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.
This document is a product specification datasheet for the Philips BUK456-1000B, an N-channel enhancement mode field-effect power transistor. The device is designed in a plastic TO220AB envelope and is intended for use in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.
The datasheet provides comprehensive technical data including limiting values, static characteristics such as breakdown voltage and on-state resistance, dynamic characteristics like capacitance and switching times, and reverse diode specifications. It also includes normalized graphs for power derating, current derating, safe operating area, and thermal impedance.
| Drain-source voltage (Vos) | 1000 V |
|---|---|
| Drain current (DC) (Ip) | 3.1 A |
| Total power dissipation (Prot) | 125 W |
| Junction Temperature (Tj) | 150 °C |
| Package type | TO220AB |
The maximum junction temperature (Tj) is 150 °C.
The maximum total power dissipation is 125 W when the junction temperature is 25°C.