Key facts
- Brand
- Philips
- Model
- BUK436W-200A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BUK436W-200A/B PowerMOS Transistor Product Specification
This document is a product specification datasheet for the Philips BUK436W-200A/B PowerMOS transistor. The device is an N-channel enhancement mode field-effect power transistor designed for use in switched mode power supplies, motor control, welding, and general-purpose switching applications. It is packaged in a plastic envelope (SOT429 / T0247) with a tab connected to the drain.
Read onlinePhilips BUK436W-200A specifications
| Drain-source voltage | 200 V |
|---|---|
| Drain current (DC) | 19 A / 17 A |
| Total power dissipation | 125 W |
| Package type | SOT429 (T0247) |
| Junction temperature | 150 °C |
Source: Philips BUK436W-200A/B PowerMOS Transistor Product Specification
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature?
The maximum junction temperature is 150 °C.
From: Philips BUK436W-200A/B PowerMOS Transistor Product Specification
What is the package type?
The transistor is available in a SOT429 (T0247) plastic envelope.
From: Philips BUK436W-200A/B PowerMOS Transistor Product Specification
What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150 °C.
From: Philips Semiconductors BUK436W-200A/B PowerMOS Transistor Datasheet
What is the maximum total power dissipation at a junction temperature of 25°C?
The maximum total power dissipation is 125 W when the junction temperature (Tj) is 25°C.
From: Philips Semiconductors BUK436W-200A/B PowerMOS Transistor Datasheet