Key facts
- Brand
- Philips
- Model
- BUK444-800A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BUK444-800A/B PowerMOS Transistor Datasheet
This document is a product specification for the Philips BUK444-800A/B, an N-channel enhancement mode field-effect power transistor. The device is housed in a plastic full-pack envelope (SOT186) and is designed for use in switched mode power supplies, motor control, welding, and general purpose switching applications.
The datasheet provides comprehensive technical data including limiting values, static and dynamic characteristics, thermal resistances, and reverse diode specifications. It also includes graphical representations of normalized power dissipation, current derating, and various electrical characteristics such as output and transfer characteristics.
Philips BUK444-800A specifications
| Drain-source voltage | 800 V |
|---|---|
| Drain current (DC) | 1.4 A (A) / 1.2 A (B) |
| Total power dissipation | 30 W |
| Package type | SOT186 |
| Junction Temperature | 150 C |
All Philips BUK444-800A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature?
The maximum junction temperature is 150 C.
What is the package type?
The transistor is in a plastic full-pack envelope, specifically SOT186.
What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150 °C.
What is the maximum total power dissipation for this transistor?
The maximum total power dissipation is 30 W when the case temperature is 25°C.