Key facts
- Brand
- Philips
- Model
- BUK436W-800A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips Semiconductors BUK436W-800A/B PowerMOS Transistor Product Specification
This document is a product specification datasheet for the BUK436W-800A and BUK436W-800B, which are N-channel enhancement mode field-effect power transistors. The devices are packaged in a plastic SOT429 (T0247) envelope and are intended for use in switched mode power supplies, motor control, welding, DC/DC converters, and AC/DC converters.
Read onlinePhilips BUK436W-800A specifications
| Drain-source voltage (Vos) | 800 V |
|---|---|
| Total power dissipation (Prot) | 125 W |
| Package type | SOT429 (T0247) |
Source: Philips Semiconductors BUK436W-800A/B PowerMOS Transistor Product Specification
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature?
The maximum junction temperature is 150 °C.
From: Philips Semiconductors BUK436W-800A/B PowerMOS Transistor Product Specification
What is the maximum total power dissipation at a junction temperature of 25°C?
The maximum total power dissipation is 125 W when the junction temperature (Tj) is 25°C.
From: Philips Semiconductors BUK436W-800A/B PowerMOS Transistor Product Specification
What is the maximum junction temperature?
The maximum junction temperature is 150 °C.
From: Philips Semiconductors PowerMOS transistor BUK436W-800A/B Product specification1
What is the maximum total power dissipation for this transistor at 25°C?
The maximum total power dissipation is 125 W when the temperature is 25°C.
From: Philips Semiconductors PowerMOS transistor BUK436W-800A/B Product specification1