Key facts
- Brand
- Philips
- Model
- BUK453-100A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BUK453-100A/B PowerMOS Transistor Datasheet
Datasheet 7 pages · 56 KB · EN
This document is a product specification datasheet for the Philips PowerMOS transistor model BUK453-100A and BUK453-100B. The device is an N-channel enhancement mode field-effect power transistor housed in a plastic TO220AB envelope, designed for applications such as switched-mode power supplies (SMPS), motor control, welding, and general-purpose switching.
Read onlinePhilips BUK453-100A specifications
| Drain-source voltage (Vos) | 100 V |
|---|---|
| Drain current (DC) - BUK453-100A | 14 A |
| Drain current (DC) - BUK453-100B | 13 A |
| Total power dissipation (Prot) | 75 W |
| Junction temperature (Tj) | 175 °C |
| Package type | TO220AB |
All Philips BUK453-100A documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum total power dissipation at a junction temperature of 25°C?
The maximum total power dissipation is 75 W when the junction temperature is 25°C.
What are the maximum drain currents for the BUK453-100A and BUK453-100B models at a junction temperature of 25°C?
The maximum DC drain current is 14 A for the -100A model and 13 A for the -100B model at 25°C.
What is the maximum junction temperature?
The maximum junction temperature is 175 °C.
What is the maximum total power dissipation for the BUK453-100A/B transistor?
The maximum total power dissipation is 75 W when the junction temperature is 25°C.