BUK456-1000B is a N-channel enhancement mode field-effect power transistor from Philips Semiconductors. It is packaged in a TO220AB package and has a rated drain-source voltage of 1000V, a rated drain current of 3.1A and a rated total power dissipation of 125W.
This document is a product specification for the Philips BUK456-1000B, an N-channel enhancement mode field-effect power transistor housed in a plastic TO220AB envelope. The device is designed for use in switched mode power supplies, motor control, welding, and general purpose switching applications.
The datasheet provides comprehensive electrical characteristics, including static parameters such as drain-source breakdown voltage and gate threshold voltage, as well as dynamic characteristics like turn-on delay time and reverse recovery time. It also includes limiting values, thermal resistances, and mechanical dimensions for the TO220AB package.
| Drain-source voltage | 1000 V |
|---|---|
| Total power dissipation | 125 W |
The maximum drain-source voltage is 1000 V.
The maximum total power dissipation is 125 W.