Key facts
- Brand
- Philips
- Model
- BUK444-200A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BUK444-200A/B PowerMOS Transistor Datasheet
This document is a product specification for the Philips BUK444-200A/B N-channel enhancement mode power MOS transistor. It is designed for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications. The device is housed in a plastic full-pack envelope (SOT186) with an isolated case.
Read onlinePhilips BUK444-200A specifications
| Drain-source voltage | 200 V |
|---|---|
| Drain current (DC) | 5.3 A (BUK444-200A) |
| Total power dissipation | 25 W |
| Package type | SOT186 |
All Philips BUK444-200A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the intended applications for this transistor?
The device is intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.
What is the maximum total power dissipation for this transistor at 25°C?
The maximum total power dissipation is 25 W when the case temperature is 25°C.
What is the maximum total power dissipation at a junction temperature of 25°C?
The maximum total power dissipation is 25 W when the junction temperature is 25°C.
From: Philips Semiconductors BUK444-200A/B PowerMOS Transistor Datasheet
What is the maximum drain-source voltage rating for this transistor?
The device has a maximum drain-source voltage of 200 V.
From: Philips Semiconductors BUK444-200A/B PowerMOS Transistor Datasheet