BUK444-800A/B is a power MOS transistor suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 800V, a drain current (DC) of 1.4A, and a total power dissipation of 30W.
This document is a product specification for the Philips BUK444-800A/B, an N-channel enhancement mode field-effect power transistor. The device is housed in a plastic full-pack envelope (SOT186) and is designed for use in switched mode power supplies, motor control, welding, and general purpose switching applications.
The datasheet provides comprehensive technical data including limiting values, static and dynamic characteristics, thermal resistances, and reverse diode specifications. It also includes graphical representations of normalized power dissipation, current derating, and various electrical characteristics such as output and transfer characteristics.
| Drain-source voltage | 800 V |
|---|---|
| Drain current (DC) | 1.4 A (A) / 1.2 A (B) |
| Total power dissipation | 30 W |
| Package type | SOT186 |
| Junction Temperature | 150 C |
The maximum junction temperature is 150 C.
The transistor is in a plastic full-pack envelope, specifically SOT186.