PHILIPS PowerMOS transistor BUK444-800A/B datasheet

Update: 29 September, 2023

This document describes the features and characteristics of the Philips Semiconductors PowerMOS transistor BUK444-800A/B. It is a N-channel enhancement mode field-effect power transistor with a drain-source voltage of 800V and a drain current of 1.4A. The device is intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching resistance applications.

---

File format: PDF

Size: -

MD5 Checksum: 701598DC67347C953A4073B1B257E4F7

Publication date: 06 July, 2012

Downloads: -

PDF Link: PHILIPS PowerMOS transistor BUK444-800A/B datasheet PDF