This document describes the features and characteristics of the Philips Semiconductors PowerMOS transistor BUK444-800A/B. It is a N-channel enhancement mode field-effect power transistor with a drain-source voltage of 800V and a drain current of 1.4A. The device is intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching resistance applications.
This datasheet describes the Philips BUK444-800A/B, an N-channel enhancement mode field-effect power transistor housed in a plastic full-pack envelope (SOT186). The device is designed for use in switched-mode power supplies, motor control, welding, and general-purpose switching applications.
The document provides comprehensive technical data including limiting values, static and dynamic characteristics, isolation limits, reverse diode specifications, and normalized performance graphs. It also includes mechanical dimensions and handling precautions.
| Drain-source voltage (Vos) | 800 V |
|---|---|
| Drain current (DC) - BUK444-800A | 1.4 A |
| Drain current (DC) - BUK444-800B | 1.2 A |
| Total power dissipation (Prot) | 30 W |
| Drain-source on-state resistance - BUK444-800B | 8.0 Ohm (Max) |
| Package type | SOT186 |
The maximum junction temperature (Tj) is 150 °C.
The maximum total power dissipation is 30 W when the case temperature is 25°C.
The maximum drain-source voltage is 800 V.
The device can be stored between -55°C and 150°C.