Philips Semiconductors BUK444-200A/B PowerMOS Transistor Datasheet

BUK444-200A/B is a N-channel enhancement mode field-effect power transistor produced by Philips Semiconductors. It is used in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.


Philips Semiconductors BUK444-200A/B PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
58 KB
Published
06 July, 2012
Updated
30 September, 2023
MD5 checksum
1F6D4C3BF309747E50333F2FD4526393

About this manual

The document is a product specification datasheet for the PowerMOS transistor model BUK444-200A and BUK444-200B. These devices are N-channel enhancement-mode field-effect transistors designed for use in switched mode power supplies, motor control, welding, and general-purpose switching applications.

What's inside

  • General Description
  • Quick Reference Data
  • Limiting Values
  • Thermal Resistances
  • Static Characteristics
  • Dynamic Characteristics
  • Isolation Limiting Value
  • Reverse Diode Characteristics
  • Avalanche Limiting Value
  • Mechanical Data

Specifications

Drain-source voltage (Vos)200 V
Drain current (DC) - BUK444-200A5.3 A
Drain current (DC) - BUK444-200B4.7 A
Total power dissipation (Prot)25 W
Package typeSOT186

Frequently asked questions

What is the maximum total power dissipation at a junction temperature of 25°C?

The maximum total power dissipation is 25 W when the junction temperature is 25°C.

What is the maximum drain-source voltage rating for this transistor?

The device has a maximum drain-source voltage of 200 V.

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