Philips BUK444-200A/B PowerMOS Transistor Datasheet

BUK444-200A/B is a power field-effect transistor used in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching resistance applications.


Philips BUK444-200A/B PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
58 KB
Published
06 July, 2012
Updated
28 September, 2023
MD5 checksum
29C703D951B417279631F0A580549EAE

About this manual

This document is a product specification for the Philips BUK444-200A/B N-channel enhancement mode power MOS transistor. It is designed for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications. The device is housed in a plastic full-pack envelope (SOT186) with an isolated case.

What's inside

  • General Description
  • Quick Reference Data
  • Pinning
  • Limiting Values
  • Thermal Resistances
  • Static Characteristics
  • Dynamic Characteristics
  • Isolation Limiting Values
  • Reverse Diode Characteristics
  • Avalanche Limiting Value

Specifications

Drain-source voltage200 V
Drain current (DC)5.3 A (BUK444-200A)
Total power dissipation25 W
Package typeSOT186

Frequently asked questions

What are the intended applications for this transistor?

The device is intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.

What is the maximum total power dissipation for this transistor at 25°C?

The maximum total power dissipation is 25 W when the case temperature is 25°C.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage is 200 V.

What is the maximum junction temperature for this device?

The maximum junction temperature is 150°C.

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