Philips Semiconductors BUK436W-800A/B PowerMOS Transistor Product Specification

BUK436W-800A/B is a power MOS transistor intended for use in applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 800V, drain current of 4A, total power dissipation of 125W, and drain-source on-state resistance of 3-4Ω.


Philips Semiconductors BUK436W-800A/B PowerMOS Transistor Product Specification - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
72 KB
Published
06 July, 2012
Updated
29 September, 2023
MD5 checksum
6D1B38C75691938E498FA3BDB1CD4AC9

About this manual

This document is a product specification datasheet for the BUK436W-800A and BUK436W-800B, which are N-channel enhancement mode field-effect power transistors. The devices are packaged in a plastic SOT429 (T0247) envelope and are intended for use in switched mode power supplies, motor control, welding, DC/DC converters, and AC/DC converters.

What's inside

  • General Description
  • Quick Reference Data
  • Pinning
  • Limiting Values
  • Thermal Resistances
  • Static Characteristics
  • Dynamic Characteristics
  • Reverse Diode Limiting Values and Characteristics
  • Mechanical Data
  • Definitions

Specifications

Drain-source voltage (Vos)800 V
Total power dissipation (Prot)125 W
Package typeSOT429 (T0247)

Frequently asked questions

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.

What is the maximum total power dissipation at a junction temperature of 25°C?

The maximum total power dissipation is 125 W when the junction temperature (Tj) is 25°C.

What is the maximum drain-source voltage rating for this transistor?

The device has a maximum drain-source voltage of 800 V.

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