BUK436W-800A/B is an N-channel enhancement mode power MOS transistor intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications. It features a drain-source voltage of 800V, drain current of 4A, total power dissipation of 125W, and drain-source on-state resistance of 3-4Ω.
This document is a product specification datasheet for the BUK436W-800A/B, an N-channel enhancement mode field-effect power transistor. The device is designed in a plastic SOT429 (T0247) envelope and is intended for use in switched mode power supplies, motor control, welding, and general purpose switching applications.
The datasheet provides comprehensive technical data including limiting values such as a maximum drain-source voltage of 800V and total power dissipation of 125W. It details static characteristics like on-state resistance and dynamic parameters including capacitance and switching times. Additionally, it includes reverse diode specifications, thermal resistance data, mechanical dimensions, and application notes regarding life support usage.
| Drain-source voltage (Max) | 800 V |
|---|---|
| Drain current (DC) Max @ 25°C | 4.0 A / 3.5 A |
| Total power dissipation Max @ 25°C | 125 W |
| Package Type | SOT429 (T0247) |
| Input capacitance Typ @ 1 MHz | 1250 pF |
| Turn-off delay time Max | 150 ns |
The maximum junction temperature is 150 °C.
The maximum total power dissipation is 125 W when the temperature is 25°C.
The maximum drain-source voltage is 800 V.
The device can be stored between -55°C and 150°C.