The BUK436W-200A/B is an N-channel enhancement mode power field-effect transistor suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 200V, a drain current of 19A, and a drain-source on-state resistance of 0.16Ω.
This document is a product specification datasheet for the Philips BUK436W-200A/B PowerMOS transistor. The device is an N-channel enhancement mode field-effect power transistor designed for use in switched mode power supplies, motor control, welding, and general-purpose switching applications. It is packaged in a plastic envelope (SOT429 / T0247) with a tab connected to the drain.
| Drain-source voltage | 200 V |
|---|---|
| Drain current (DC) | 19 A / 17 A |
| Total power dissipation | 125 W |
| Package type | SOT429 (T0247) |
| Junction temperature | 150 °C |
The maximum junction temperature is 150 °C.
The transistor is available in a SOT429 (T0247) plastic envelope.