Philips Semiconductors BUK436W-200A/B PowerMOS Transistor Datasheet

BUK436W-200A/B is a power MOS transistor widely used in applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 200V, a drain current of 19A, a total power dissipation of 125W, and a drain-source on-state resistance of 0.16-0.2Ω.


Philips Semiconductors BUK436W-200A/B PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
54 KB
Published
06 June, 2012
Updated
29 September, 2023
MD5 checksum
7194BEA1769474128648C3F40969ED0C

About this manual

The document is a product specification datasheet for the BUK436W-200A and BUK436W-200B PowerMOS transistors. These are N-channel enhancement-mode field-effect devices designed for use in switched mode power supplies, motor control, welding, and general-purpose switching applications.

What's inside

  • General Description
  • Quick Reference Data
  • Limiting Values
  • Thermal Resistances
  • Static Characteristics
  • Dynamic Characteristics
  • Reverse Diode Limiting Values
  • Mechanical Data

Specifications

Drain-source voltage (Max)200 V
Package typeSOT429 (T0247)

Frequently asked questions

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 150 °C.

What is the maximum total power dissipation at a junction temperature of 25°C?

The maximum total power dissipation is 125 W when the junction temperature (Tj) is 25°C.

What is the net mass of the transistor package?

The net mass of the SOT429 (T0247) package is 5 g.

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