Key facts
- Brand
- Fairchild
- Model
- FQPF70N10
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQPF70N10 100V N-Channel MOSFET Datasheet
This document provides the design specifications for the Fairchild FQPF70N10, a 100V N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
Read onlineFairchild FQPF70N10 specifications
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 35 A |
| Maximum Junction Temperature | 175°C |
| On-Resistance (Typical) | 0.023 Ω |
| Gate Charge (Typical) | 85 nC |
| Reverse Transfer Capacitance (Typical) | 150 pF |
| Power Dissipation (Tj = 25°C) | 62 W |
| Operating Temperature Range | -55 to +175 °C |
All Fairchild FQPF70N10 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical on-state resistance of the FQPF70N10?
The typical on-state resistance is 0.0232 Ω at Vgs = 10 V.
Is the FQPF70N10 avalanche tested?
Yes, the device is 100% avalanche tested.
What is the maximum continuous drain current of the FQPF70N10?
The device can handle a continuous drain current of 35 A at a case temperature of 25 °C.
What is the typical gate charge for this MOSFET?
The typical gate charge is 85 nC.
What is the maximum continuous drain current for the FQPF70N10?
The device can handle a continuous drain current of 35 A at 25 °C and 247 A at 100 °C.
What is the on‑resistance of the FQPF70N10 at VGS = 10 V?
The typical on‑resistance is 0.0232 Ω when the gate‑source voltage is 10 V.