Key facts
- Brand
- Fairchild
- Model
- FQPF7N80
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF7N80 800V N-Channel MOSFET Datasheet
Datasheet 8 pages · 757 KB · EN
The Fairchild FQPF7N80 is an N‑Channel enhancement mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge (typical 40 nC), low output capacitance (typical 19 pF), fast switching, and 100 % avalanche testing.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions for the TO‑220F package, along with trademark, disclaimer, and product status information.
Fairchild FQPF7N80 specifications
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 3.8 A |
| Pulsed Drain Current (ID) (Note 1) | 15.2 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 56 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.25 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Qg) | 40 nC |
All Fairchild FQPF7N80 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 800 V.
How much continuous drain current can the MOSFET handle at 25 °C?
It can handle a continuous drain current of 3.8 A at 25 °C.